Successful heteroepitaxial film growth can integrate heterogeneous films with lattice mismatches. Excellent heteroepitaxial films can reduce lattice mismatch stress and reduce material defect density, thereby providing subsequent smooth sur faces of heteroepitaxial films and reducing deposition time during epitaxial growth of subsequent thin films. The interfacial structure of the heteroepitaxial film and its chemical stability has become widely used in the prediction of heterogeneous films. However, it is extremely difficult for scientists to predict the interfacial structure of heteroepitaxial thin films by comparing the first-principles models or not by directly observing the experimental results.  Recently, we propose a materials genome approach to calculate heterostructure predictions. The materials genome approach was published in a peer reviewed journal of Materials Today Communications, Vol. 23, pp. 100866, 2020.  Heterostructure Open Database (HOD) for dealing with thin-film heterostructure predictions was developed by Computational materials science research group, Graduate Institute of Precision Engineering, National Chung-Hsing University, Taiwan under supervision of Prof. Po-Liang Liu. We create open-source platform of HOD for sharing thin-film heterostructure predictions and make user interfaces in software to connect our thin-film heterostructure database.  In addition, we will provide a cloud platform for the academic and industrial communities to share solutions and discuss future research directions.  Finally, the innovated results through HOD will develop future advanced emerging semiconductor processes, materials and device technology and reduce innovation cycle time in semiconductor processes, materials and device. The HOD database was funded by Ministry of Science and Technology (MOST), Taiwan, grant numbers 109-2221-E-005 -042.